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Electrical Characteristics
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 |
Drain Current-Max (ID) | 1 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-CDFP-F16 |
JESD-609 Code | e4 |
Number of Elements | 1 |
Number of Terminals | 16 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | FLATPACK |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Surface Mount | YES |
Terminal Finish | GOLD |
Terminal Form | FLAT |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |