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Ordering Info
In Stock: 0
Package Quantity: 0
HTS Code: 8541.29.0095
ECCN: 3A001h
COO: BE
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
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Product Info
- General Description
- Benefits
- High Temperature Operation
- Extended lifetime and high reliability
- Low Switching Energy enabling High Frequency Switching
- Pins electrically isolated from the case easing mechanical and thermal integration
- Seamless driving with HADES® gate driver solutions
- Features
- Specified from -55 to +225°C (Tj)
- VDS Max: 1200V
- IDS Max Continuous Current 10A at TC?210°C
- IDS Max Continuous Current 8.7A at TC=215°C
- Typical On-resistance RDSon= 40 m? @ 25°C
- Typical On-resistance RDSon= 120 m? @ 225°C
- Low Switching Energy Eon= 240µJ Eoff= 140µJ
- Voltage control: VGS=-4V/20V
- Gate charge: QGS=22nC
- Low capacitance: COSS=76 pF
- Package: TO-257
- Thermal Safe Operation Area model
- Applications
- High Temperature, High Power Density and Extended Lifetime Power Converters
- DC-AC Converters for motor drives & actuator controls
- DC-DC converters
- AC-DC converters and battery chargers
CHT-NEPTUNE-1210 is a High Temperature, High Voltage, Silicon Carbide MOSFET switch. It is available in a metal TO-257 package – the metal case being electrically isolated from the switch terminals. The product is guaranteed for normal operation on the full range -55°C to +225°C (Tj). The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A. The device features a body diode that can be used as freewheeling diode.
This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On-Resistance with equivalent switching energies.