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Product Info
- General Description
- Benefits
- High Temperature Operation
- Extended lifetime and high reliability
- Low Switching Energy enabling High Frequency Switching
- Pins electrically isolated from the case easing mechanical and thermal integration
- Seamless driving with HADES® gate driver solutions
- Features
- Specified from -55 to +225°C (Tj)
- VDS Max: 1200V
- IDS Max Continuous Current 10A at TC?210°C
- IDS Max Continuous Current 8.7A at TC=215°C
- Typical On-resistance RDSon= 40 m? @ 25°C
- Typical On-resistance RDSon= 120 m? @ 225°C
- Low Switching Energy Eon= 240µJ Eoff= 140µJ
- Voltage control: VGS=-4V/20V
- Gate charge: QGS=22nC
- Low capacitance: COSS=76 pF
- Package: TO-257
- Thermal Safe Operation Area model
- Applications
- High Temperature, High Power Density and Extended Lifetime Power Converters
- DC-AC Converters for motor drives & actuator controls
- DC-DC converters
- AC-DC converters and battery chargers
CHT-NEPTUNE-1210 is a High Temperature, High Voltage, Silicon Carbide MOSFET switch. It is available in a metal TO-257 package – the metal case being electrically isolated from the switch terminals. The product is guaranteed for normal operation on the full range -55°C to +225°C (Tj). The device has a breakdown voltage in excess of 1200V and is capable of switching currents up to 10A. The device features a body diode that can be used as freewheeling diode.
This new version D (PLA8543D), replacing obsolete version C (PLA8543C), offers lower On-Resistance with equivalent switching energies.