Request Quote
Request Quote
Thank you for your inquiry. We are working on your request and will respond as soon as possible. For immediate inquiries please call 1-866-651-2901
Download the free Library Loader to convert this file for your ECAD Tool.
Learn more about ECAD Model here.
Product Info
This product is EOL. Please see NAC EOL Notice for Cissoid.pdf
For more information or contact sales@nacsemi.com
- General Description
The CHT-GANYMEDE is a high temperature dual series 80V / 300mA diode in a hermetically sealed TO18 metal can package. It is designed to achieve high performance in an extremely wide temperature ran
Electrical Characteristics
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-254 |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 2.5 |
| Surface Mount | NO |
| Terminal Finish | NICKEL |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |