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Ordering Info
In Stock: 0
MOQ: 5
Lead Time: 12 weeks
Package Quantity: 5
HTS Code: 8541.29.00.95
ECCN: EAR99
COO: BE
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 5 | - |
Product Info
This product is EOL. Please see NAC EOL Notice for Cissoid.pdf
For more information or contact sales@nacsemi.com
- General Description
The CHT-GANYMEDE is a high temperature dual series 80V / 300mA diode in a hermetically sealed TO18 metal can package. It is designed to achieve high performance in an extremely wide temperature ran
Electrical Characteristics
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-254 |
| JESD-30 Code | S-MSFM-P3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | SQUARE |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 2.5 |
| Surface Mount | NO |
| Terminal Finish | NICKEL |
| Terminal Form | PIN/PEG |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |