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CHT-PMOS3004-TO254-T | CISSOID

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CISSOID CHT-PMOS3004-TO254-T

High Temp P-Channel MOSFET 30 V 4 A TO-254


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 5

Lead Time: 12 weeks

Package Quantity: 5

HTS Code: 8541.29.00.95

ECCN: EAR99

COO: BE

Quantity Cost
5 -

Product Info

This product is EOL. Please see NAC EOL Notice for Cissoid.pdf
For more information or contact sales@nacsemi.com


General Description

CHT-CALLISTO features high temperature dual common anode 80V / 300mA diodes packaged in a hermetically sealed TO18 metal can. It is designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low. This dual diode can be used in a variety of applications, including rectification and general purpose.

Features
Specified from -55 to +225°C (Tj)
Reverse voltage: VR = 80V (max)
Forward current: IF = 280 mA (max @ 225°C (Tj) and VF = 1.5V)
Forward voltage: VF = 0.7V (typ. @ IF = 1mA)
Junction capacitance: Cj=8.5pF (typ. @ VR = 25V)
Package: Hermetically sealed metal can TO18
Applications
Voltage multiplier / charge-pumps
Signal rectification
General purpose diode

Electrical Characteristics

Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254
JESD-30 Code S-MSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 5
Surface Mount NO
Terminal Finish NICKEL
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON