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- General Description
- Features
- Specified from -55 to +225°C (Tj)
- Reverse voltage: VR = 80V (max)
- Forward current: IF = 280 mA (max @ 225°C (Tj) and VF = 1.5V)
- Forward voltage: VF = 0.7V (typ. @ IF = 1mA)
- Junction capacitance: Cj=8.5pF (typ. @ VR = 25V)
- Package: Hermetically sealed metal can TO18
- Applications
- Voltage multiplier / charge-pumps
- Signal rectification
- General purpose diode
CHT-CALLISTO features high temperature dual common anode 80V / 300mA diodes packaged in a hermetically sealed TO18 metal can. It is designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low. This dual diode can be used in a variety of applications, including rectification and general purpose.
Electrical Characteristics
Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-254 |
JESD-30 Code | S-MSFM-P3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | METAL |
Package Shape | SQUARE |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | P-CHANNEL |
Pulsed Drain Current-Max (IDM) | 5 |
Surface Mount | NO |
Terminal Finish | NICKEL |
Terminal Form | PIN/PEG |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |