Request Quote













Request Quote


CISSOID CHT-PMOS3004-TO254-T

High Temp P-Channel MOSFET 30 V 4 A TO-254


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 5

Lead Time: 12 weeks

Package Quantity: 5

HTS Code: 8541.29.00.95

ECCN: EAR99

COO: BE

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
5 -

Product Info

This product is EOL. Please see NAC EOL Notice for Cissoid.pdf
For more information or contact sales@nacsemi.com


General Description

CHT-CALLISTO features high temperature dual common anode 80V / 300mA diodes packaged in a hermetically sealed TO18 metal can. It is designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C while keeping leakage currents low. This dual diode can be used in a variety of applications, including rectification and general purpose.

Features
Specified from -55 to +225°C (Tj)
Reverse voltage: VR = 80V (max)
Forward current: IF = 280 mA (max @ 225°C (Tj) and VF = 1.5V)
Forward voltage: VF = 0.7V (typ. @ IF = 1mA)
Junction capacitance: Cj=8.5pF (typ. @ VR = 25V)
Package: Hermetically sealed metal can TO18
Applications
Voltage multiplier / charge-pumps
Signal rectification
General purpose diode

Electrical Characteristics

Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254
JESD-30 Code S-MSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 5
Surface Mount NO
Terminal Finish NICKEL
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON