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Electrical Characteristics
Case Connection | SOURCE |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-18 |
JESD-30 Code | O-MBCY-W3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | P-CHANNEL |
Surface Mount | NO |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |