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CL10B105KO84PNC | SAMSUNG

SAMSUNG CL10B105KO84PNC

Small Signal BipolarTransistor,0.1AI(C),45VV(BR)CEO, 2-Element, NPN andPNP,Silicon


Ordering Info

In Stock: 0

MOQ: 24000

Package Quantity: 4000

HTS Code: 8532.24.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
24000 -

Electrical Characteristics

Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 45
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN AND PNP
Power Dissipation-Max (Abs) 0.2
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signals
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 300