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CMPT5179 | CENTRAL SEMICONDUCTOR

CENTRAL SEMICONDUCTOR CMPT5179

RF Small Signal Bipolar Transistor,0.05AI(C),1-Element, Very High Frequency Band,Silicon,NPN


Ordering Info

In Stock: 30

MOQ: 1

Lead Time: 12 weeks

Package Quantity: 1

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1+ $0.51


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Electrical Characteristics

Additional Feature LOW NOISE
Collector Current-Max (IC) 0.05
Collector-base Capacitance-Max 1
Collector-emitter Voltage-Max 12
Configuration SINGLE
DC Current Gain-Min (hFE) 25
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.35
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 1450