Request Quote
Request Quote
Thank you for your inquiry. We are working on your request and will respond as soon as possible. For immediate inquiries please call 1-866-651-2901
Download the free Library Loader to convert this file for your ECAD Tool.
Learn more about ECAD Model here.Product Info
- General Description
- Applications
- Ideally suited for high reliability markets like automotive, aerospace, railway, Oil & Gas
- Motor drivers : electrical cars, railway, industrial pumps, down-hole,à
- Actuators
- DC-DC converters and SMPS : battery chargers, à
- Inverters : olar inverters, smart grid, EV and HEV, 3 phases inverters
- Power conversion : uninterruptible power supplies, wind turbine, à
- Features
- Operating junction temperature from -55°C to +175°C
- Supply voltage: 5 to 30V
- Output peak current: 12A & 125°C & 9A @ 175°C
- RDSON: 0.25O typ. @ 25°C & 0.45O typ. @ 175°C
- Max PWM frequency : 1MHz
- Propagation delay: 160 ns typ
- Rise time / fall time (CLoad=1nF): 30ns typ
- Isolated OOK modulated interface: 1 TX and RX channels
- Standard digital interface (PWM, FAULT)
- Soft-shut down
- Desaturation detection w/ programmable threshold & blanking time
- Under-Voltage Lockout (UVLO)
- Over temperature protection
- Fault generation with programmable automatic re-start timer
- Active Miller Clamping (w/ ext. MOSFET)
- Common mode transient immunity: >50kV/µs typ
- Capable to drive wide variety of power switch types
- Package: Plastic PQFP44
CMT-HADES2S is a high-temperature, high reliability single chip fully integrated gate driver specifically designed to drive widebandgap high voltage / high power transistors, in particular Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It offers the most compact solution available on the market thanks to its small size and the low number of external components it requires, It also features the highest output current in the industry for products of this type. CMTHADES2S can be used with standard silicon MOSFETs and IGBTs in extended temperature applications (>125°C) where it brings an increase in reliability and lifetime by an order of magnitude compared to traditional solutions. The circuit features pushpull transistors capable of sourcing/sinking up to 12A each. It includes as well softshutdown, under-voltage lockout, desaturation detection, Active Miller Clamping, overtemperature sensing and isolation interface to primary function.
CMT-HADES2S can be used either standalone or in combination with CMTHADES2P, which generates control signal to drive high bandwidth transistors.