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Product Info
- Designed to drive 62mm 300A SiC MOSFET Power Modules
- Board size: 69 mm * 116 mm
- Operating temperature: -40°C to 125°C
- Bus voltage:1200V/1700V max
- Isolation: 3600VAC @50Hz (1min)
- 14mm creepage/12mm clearance
- > 50kV/µs dV/dt immunity
- Low parasitic capacitance between primary and high-side: 10pF
- Switching frequency up to 100kHz
- Delay (PWM to VOUT): 200ns typ.
- FET Gate rise/fall time:40ns typ.
- Gate driving voltages: +20V/-5V (3% precision)
- Low inductance gate loop design
- Single power supply: 12V-18V
- RS422 PWM input interface
- Open-drain fault output
- Under voltage lockout (UVLO)
- On-board optional non-overlap generation (via jumper)
- Anti-overlap protection (on PWM inputs)
- Glitch suppressor on PWM inputs
- Desaturation protection
- Gate-Source short-circuit protection
- Open-drain fault output