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Ordering Info
In Stock: 0
Lead Time: 12 weeks
Package Quantity: 1
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 1+ | $0.86 |
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Electrical Characteristics
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 |
| Drain Current-Max (Abs) (ID) | 1.8 |
| Drain Current-Max (ID) | 1.8 |
| Drain-source On Resistance-Max | 0.25 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-236 |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e6 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1 |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |