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CSD17501Q5A | TEXAS INSTRUMENTS

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TEXAS INSTRUMENTS CSD17501Q5A

Power Field-Effect Transistor, 28AI(D),30V,0.0037ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 405
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 100
Drain Current-Max (ID) 28
Drain-source On Resistance-Max 0.0037
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.2
Pulsed Drain Current-Max (IDM) 187
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON