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Electrical Characteristics
| Access Time-Max | 10 |
| JESD-30 Code | R-PDSO-J36 |
| JESD-609 Code | e4 |
| Length | 23.495 |
| Memory Density | 4194304 |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 8 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Terminals | 36 |
| Number of Words | 524288 |
| Number of Words Code | 512K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 |
| Operating Temperature-Min | -40 |
| Organization | 512KX8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | SOJ |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | 260 |
| Seated Height-Max | 3.7592 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 2.2 |
| Supply Voltage-Nom (Vsup) | 3 |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | J BEND |
| Terminal Pitch | 1.27 |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Width | 10.16 |