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Electrical Characteristics
| Access Time-Max | 0.45 |
| Additional Feature | PIPELINED ARCHITECTURE |
| Clock Frequency-Max (fCLK) | 250 |
| I/O Type | SEPARATE |
| JESD-30 Code | R-PBGA-B165 |
| JESD-609 Code | e0 |
| Length | 15 |
| Memory Density | 37748736 |
| Memory IC Type | QDR SRAM |
| Memory Width | 9 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Terminals | 165 |
| Number of Words | 4194304 |
| Number of Words Code | 4M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 |
| Operating Temperature-Min | 0 |
| Organization | 4MX9 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | LBGA |
| Package Equivalence Code | BGA165,11X15,40 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | 235 |
| Power Supplies | 1.5/1.8,1.8 |
| Qualification Status | Not Qualified |
| Seated Height-Max | 1.4 |
| Standby Current-Max | 0.26 |
| Standby Voltage-Min | 1.7 |
| Sub Category | SRAMs |
| Supply Current-Max | 0.59 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | BALL |
| Terminal Pitch | 1 |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 20 |
| Width | 13 |