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CY7C1512KV18-250BZXC | CYPRESS SEMI

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CYPRESS SEMI CY7C1512KV18-250BZXC

CY7C1512KV18 Series 72 Mb (4 M x 18) 1.7 - 1.9 V QDR® II SRAM - FBGA-165


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 136

Package Quantity: 136

Quantity Cost
136 -

Electrical Characteristics

Access Time-Max 0.45
Additional Feature PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V
Clock Frequency-Max (fCLK) 250
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15
Memory Density 75497472
Memory IC Type QDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 4194304
Number of Words Code 4M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70
Operating Temperature-Min 0
Organization 4MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Power Supplies 1.5/1.8,1.8
Qualification Status Not Qualified
Seated Height-Max 1.4
Standby Voltage-Min 1.7
Sub Category SRAMs
Supply Current-Max 0.65
Supply Voltage-Max (Vsup) 1.9
Supply Voltage-Min (Vsup) 1.7
Supply Voltage-Nom (Vsup) 1.8
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 1
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 13