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Electrical Characteristics
| Additional Feature | LOW CAPACITANCE |
| Configuration | COMPLEX |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Forward Voltage-Max (VF) | 1.2 |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 12 |
| Number of Terminals | 8 |
| Operating Temperature-Max | 150 |
| Operating Temperature-Min | -55 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity | UNIDIRECTIONAL |
| Power Dissipation-Max | .73 |
| Qualification Status | Not Qualified |
| Rep Pk Reverse Voltage-Max | 18 |
| Reverse Current-Max | 2 |
| Reverse Test Voltage | 15 |
| Sub Category | Other Diodes |
| Surface Mount | YES |
| Technology | AVALANCHE |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |