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DALC112S1RL | ST MICROELECTRONICS

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ST MICROELECTRONICS DALC112S1RL

DALC112S1 Series 6 Channel Bi-Directional Diode Array SMT - SOIC-8


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

COO: CN

Subject to tariff fees.

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature VERY LOW CAPACITANCE
Configuration COMPLEX
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.3
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 12
Number of Terminals 8
Operating Temperature-Max 150
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 18
Reverse Current-Max 2
Reverse Test Voltage 15
Sub Category Other Diodes
Surface Mount YES
Technology AVALANCHE
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30