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DDTD113ZC-7-F | DIODES INC.

DIODES INC. DDTD113ZC-7-F

DDTDxxxxC Series NPN 50 V 500 mA 1 kO/10 kO Pre-Baised Transistor - SOT-23


Ordering Info

In Stock: 0

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.0075

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
6000 -

Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.5
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 56
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200