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DDTD113ZC-7-F | DIODES INC.

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DIODES INC. DDTD113ZC-7-F

DDTDxxxxC Series NPN 50 V 500 mA 1 kO/10 kO Pre-Baised Transistor - SOT-23


Ordering Info

In Stock: 6000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
6000+ $0.0396


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Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.5
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 56
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200