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DE375-102N12A | IXYS

IXYS DE375-102N12A

RF Power Field-Effect Transistor, 1-Element, VeryHigh Frequency Band, Silicon, N-Channel,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 1000
Drain Current-Max (Abs) (ID) 12
Drain Current-Max (ID) 12
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-F6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 940
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON