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DMB53D0UDW-7 | DIODES INC.

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DIODES INC. DMB53D0UDW-7

DMB53D0UDW series 50 V 4 Ohm N-Channel Mosfet + NPN Transistor - SOT-363


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature HIGH RELIABILITY
Collector Current-Max (IC) 0.1
Configuration SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
DC Current Gain-Min (hFE) 200
DS Breakdown Voltage-Min 50
Drain Current-Max (ID) 0.16
Drain-source On Resistance-Max 4
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.25
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 0.3