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DMC2990UDJ-7 | DIODES INC.

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DIODES INC. DMC2990UDJ-7

Dual N/P-Channel 20 V 2.4/5 Ohm 0.5/0.4 nC 350 mW Silicon SMT Mosfet SOT-963


Ordering Info

In Stock: 700000 Delivery

MOQ: 10000

Package Quantity: 10000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
10000-699999 $0.041
700000+ $0.0383


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) .45
Drain Current-Max (ID) .33
Drain-source On Resistance-Max .99
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) .35
Reference Standard AEC-Q101
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON