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DMG1024UV-7 | DIODES INC.

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DIODES INC. DMG1024UV-7

Dual N-Channel 20 V 530 mW 736.6 pC Silicon Surface Mount Mosfet - SOT-563


Ordering Info

In Stock: 18000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-17999 $0.0837
18000+ $0.0781


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Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 1.38
Drain Current-Max (ID) 1.39
Drain-source On Resistance-Max .45
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .53
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON