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DMG4800LSD-13 | DIODES INC.

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DIODES INC. DMG4800LSD-13

DMG4800 Series Dual N-Channel 30 V 8.5 A 16 Mohm Mosfet - SOIC-8


Ordering Info

In Stock: 97500 Delivery

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500-97499 $0.19
97500+ $0.1773


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 8.5
Drain Current-Max (ID) 8.54
Drain-source On Resistance-Max .016
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.17
Pulsed Drain Current-Max (IDM) 42
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON