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DMHC3025LSD-13 | DIODES INC.

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DIODES INC. DMHC3025LSD-13

Dual N/P Channel 30 V 25 mO 11.7 nC H-Bridge Power Mosfet - SOIC-8


Ordering Info

In Stock: 30000 Delivery

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500-29999 $0.40
30000+ $0.3733


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 6
Drain Current-Max (ID) 4.6
Drain-source On Resistance-Max .025
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 4
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.5
Pulsed Drain Current-Max (IDM) 60
Reference Standard AEC-Q101
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON