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DMN6068LK3-13 | DIODES INC.

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DIODES INC. DMN6068LK3-13

N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - TO252-3L


Ordering Info

In Stock: 35000 Delivery

MOQ: 2500

Package Quantity: 2500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500-34999 $0.1757
35000+ $0.164


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Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 8.5
Drain Current-Max (ID) 6
Drain-source On Resistance-Max .068
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 8.49
Pulsed Drain Current-Max (IDM) 22.2
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON