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Ordering Info
In Stock: 0
MOQ: 6000
Package Quantity: 3000
HTS Code: 8541.21.0095
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 6000 | - |
Electrical Characteristics
| Additional Feature | HIGH RELIABILITY |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 |
| Drain Current-Max (Abs) (ID) | 0.1 |
| Drain Current-Max (ID) | 0.1 |
| Drain-source On Resistance-Max | 2 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PBCC-N3 |
| JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.47 |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |