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DMN62D0LFB-7 | DIODES INC.

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DIODES INC. DMN62D0LFB-7

DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-5999 $0.0836
6000+ $0.078


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 0.1
Drain Current-Max (ID) 0.1
Drain-source On Resistance-Max 2
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.47
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON