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DMN63D8LV-7 | DIODES INC.

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DIODES INC. DMN63D8LV-7

Dual N-Channel 30 V 2.8 O 0.45 W SMT Enhancement Mode MosFet - SOT-563


Ordering Info

In Stock: 288000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
6000-287999 $0.0447
288000+ $0.0417


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) .26
Drain Current-Max (ID) .22
Drain-source On Resistance-Max 4.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .45
Reference Standard AEC-Q101
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON