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Electrical Characteristics
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 20 |
| Drain Current-Max (ID) | 3.6 |
| Drain-source On Resistance-Max | 0.06 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | S-PBGA-B4 |
| JESD-609 Code | e1 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | GRID ARRAY |
| Polarity/Channel Type | P-CHANNEL |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | BALL |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |