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DTC123JM3T5G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR DTC123JM3T5G


Ordering Info

In Stock: 0

MOQ: 8000

Package Quantity: 8000

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
8000 -

Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.047
Collector Current-Max (IC) .1
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) .6
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON