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Electrical Characteristics
| Access Time-Max | 6.5 |
| Clock Frequency-Max (fCLK) | 125 |
| I/O Type | COMMON |
| Interleaved Burst Length | 1,2,4,8 |
| JESD-30 Code | R-PQFP-G100 |
| Memory Density | 16777216 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 32 |
| Number of Terminals | 100 |
| Number of Words | 524288 |
| Number of Words Code | 512K |
| Operating Temperature-Max | 70 |
| Operating Temperature-Min | 0 |
| Organization | 512KX32 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | QFP |
| Package Equivalence Code | QFP100,.7X.9 |
| Package Shape | RECTANGULAR |
| Package Style | FLATPACK |
| Power Supplies | 3.3 |
| Qualification Status | Not Qualified |
| Refresh Cycles | 2048 |
| Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max | .003 |
| Sub Category | DRAMs |
| Supply Current-Max | .25 |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Form | GULL WING |
| Terminal Pitch | .635 |
| Terminal Position | QUAD |