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EMB2T2R | ROHM SEMICONDUCTOR

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ROHM SEMICONDUCTOR EMB2T2R

Small Signal Bipolar Transistor, 0.03AI(C),50VV(BR)CEO, 2-Element, PNP, Silicon


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 8000

Package Quantity: 8000

Quantity Cost
8000 -

Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.03
Collector-emitter Voltage-Max 50
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68
JESD-30 Code R-PDSO-F6
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.15
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signals
Surface Mount YES
Terminal Finish TIN COPPER
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250