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EMC5DXV5T1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR EMC5DXV5T1G


Ordering Info

In Stock: 8000 Delivery

MOQ: 4000

Package Quantity: 4000

COO: CN

Subject to tariff fees.

Quantity Cost
4000-7999 $0.1211
8000+ $0.1127


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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 50
Configuration COMPLEX
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 5
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN AND PNP
Power Dissipation-Max (Abs) 0.5
Qualification Status Not Qualified
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON