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ESD8351XV2T1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR ESD8351XV2T1G

LOW CAP SNAPBACK ESD PROT


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

COO: CN

Subject to tariff fees.

Quantity Cost
3000-5999 $0.0656
6000+ $0.0607


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Electrical Characteristics

Additional Feature ULTRA LOW CAPACITANCE
Breakdown Voltage-Max 7.8
Breakdown Voltage-Min 5.5
Breakdown Voltage-Nom 7
Clamping Voltage-Max 11.2
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 3.3
Sub Category Transient Suppressors
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED