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ON SEMICONDUCTOR ESD8351XV2T1G
Trans Voltage Suppressor Diode, 3.3V V(RWM), Unidirectional, 1 Element, Silicon
Ordering Info
In Stock: 6000 Delivery
MOQ: 3000
Package Quantity: 3000
HTS Code: 8541.10.00
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 3000-5999 | $0.24 |
| 6000+ | $0.216 |
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Electrical Characteristics
| Additional Feature | ULTRA LOW CAPACITANCE |
| Breakdown Voltage-Max | 7.8 |
| Breakdown Voltage-Min | 5.5 |
| Breakdown Voltage-Nom | 7 |
| Clamping Voltage-Max | 11.2 |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 Code | R-PDSO-F2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Temperature-Max | 125 |
| Operating Temperature-Min | -55 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity | UNIDIRECTIONAL |
| Rep Pk Reverse Voltage-Max | 3.3 |
| Sub Category | Transient Suppressors |
| Surface Mount | YES |
| Technology | AVALANCHE |
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |