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Electrical Characteristics
| Additional Feature | LOW CAPACITANCE |
| Breakdown Voltage-Min | 6.1 |
| Breakdown Voltage-Nom | 6.1 |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 Code | R-PBCC-N2 |
| JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Temperature-Max | 125 |
| Operating Temperature-Min | -40 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity | BIDIRECTIONAL |
| Qualification Status | Not Qualified |
| Sub Category | Transient Suppressors |
| Surface Mount | YES |
| Technology | AVALANCHE |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |