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FDG6332C | ON SEMICONDUCTOR/FAIRCHILD

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ON SEMICONDUCTOR/FAIRCHILD FDG6332C

Small Signal Field-Effect Transistor, 0.7AI(D),20V,2-Element, N-Channel andP-Channel,Silicon,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 132000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: PH

Quantity Cost
3000-131999 $0.1943
132000+ $0.1813


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 0.6
Drain Current-Max (ID) 0.7
Drain-source On Resistance-Max 0.3
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 0.3
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON