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Electrical Characteristics
| JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 |
| Length | 4.5 |
| Memory Density | 16384 |
| Memory IC Type | MEMORY CIRCUIT |
| Memory Width | 8 |
| Moisture Sensitivity Level | 1 |
| Number of Functions | 1 |
| Number of Terminals | 8 |
| Number of Words | 2048 |
| Number of Words Code | 2K |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 |
| Operating Temperature-Min | -40 |
| Organization | 2KX8 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | HVSON |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
| Peak Reflow Temperature (Cel) | 260 |
| Seated Height-Max | 0.85 |
| Supply Voltage-Max (Vsup) | 3.65 |
| Supply Voltage-Min (Vsup) | 2.7 |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Pitch | 0.95 |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Width | 4 |