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FZT849TA | DIODES INC.

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DIODES INC. FZT849TA

Power Bipolar Transistor,3.5AI(C),300VV(BR)CEO,1-Element,NPN,Silicon,Plastic/Epoxy, 4Pin


Ordering Info

In Stock: 2000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
1000-1999 $0.4643
2000+ $0.4333


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 7
Collector-emitter Voltage-Max 30
Configuration SINGLE
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 3
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100