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Electrical Characteristics
| Alternate Memory Width | 8 |
| Clock Frequency-Max (fCLK) | 3 |
| Data Retention Time-Min | 100 |
| Endurance | 1000000 |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Length | 4.4 |
| Memory Density | 1024 |
| Memory IC Type | EEPROM |
| Memory Width | 16 |
| Moisture Sensitivity Level | 1 |
| Number of Functions | 1 |
| Number of Terminals | 8 |
| Number of Words | 64 |
| Number of Words Code | 64 |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 |
| Operating Temperature-Min | -40 |
| Organization | 64X16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TSSOP |
| Package Equivalence Code | TSSOP8,.25 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Parallel/Serial | SERIAL |
| Peak Reflow Temperature (Cel) | 260 |
| Power Supplies | 2/5 |
| Qualification Status | Not Qualified |
| Seated Height-Max | 1.2 |
| Serial Bus Type | MICROWIRE |
| Standby Current-Max | .000001 |
| Sub Category | EEPROMs |
| Supply Current-Max | .002 |
| Supply Voltage-Max (Vsup) | 5.5 |
| Supply Voltage-Min (Vsup) | 1.8 |
| Supply Voltage-Nom (Vsup) | 2.5 |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Pitch | .65 |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Width | 3 |
| Write Cycle Time-Max (tWC) | 10 |
| Write Protection | SOFTWARE |