Request Quote













Request Quote


HUF75329D3ST | HARRIS

HARRIS HUF75329D3ST

Power Field-Effect Transistor, 20AI(D),55V,0.026ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-252AA


Ordering Info

In Stock: 5000

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1 -

Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 20
Drain Current-Max (ID) 20
Drain-source On Resistance-Max 0.026
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 128
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON