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IPA60R099C6XKSA1 | INFINEON

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INFINEON IPA60R099C6XKSA1


Ordering Info

In Stock: 0

MOQ: 50

Package Quantity: 50

COO: CN

Subject to tariff fees.

Quantity Cost
50 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 796
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (ID) 37.9
Drain-source On Resistance-Max 0.099
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 112
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON