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Ordering Info
In Stock: 0
MOQ: 1000
Package Quantity: 1000
HTS Code: 8541.29.0055
ECCN: EAR99
COO: MY
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 1000 | - |
Electrical Characteristics
| Additional Feature | ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 1250 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40 |
| Drain Current-Max (ID) | 180 |
| Drain-source On Resistance-Max | 0.00098 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263 |
| JESD-30 Code | R-PSSO-G6 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 720 |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |