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IPB320N20N3GATMA1 | INFINEON

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INFINEON IPB320N20N3GATMA1


Ordering Info

In Stock: 15000 Delivery

MOQ: 1000

Package Quantity: 1000

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
1000-14999 $2.51
15000+ $2.32


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Electrical Characteristics

Avalanche Energy Rating (Eas) 190
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (ID) 34
Drain-source On Resistance-Max 0.032
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 136
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON