Request Quote
Request Quote
Thank you for your inquiry. We are working on your request and will respond as soon as possible. For immediate inquiries please call 1-866-651-2901
Ordering Info
In Stock: 0
MOQ: 1000
Package Quantity: 1000
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 1000 | - |
Electrical Characteristics
| Avalanche Energy Rating (Eas) | 171 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650 |
| Drain Current-Max (ID) | 33 |
| Drain-source On Resistance-Max | 0.065 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 145 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |