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IPD079N06L3GBTMA1 | INFINEON

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INFINEON IPD079N06L3GBTMA1


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

COO: CN

Subject to tariff fees.

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 43
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 50
Drain-source On Resistance-Max 0.0079
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON