Request Quote













Request Quote


IPD70N03S4L04ATMA1 | INFINEON

INFINEON IPD70N03S4L04ATMA1

Single N-Channel 30 V 4.3 mOhm 37 nC OptiMOS™ Power Mosfet - TO-252-3-11


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 57
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 70
Drain-source On Resistance-Max 0.0043
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 280
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON