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IPP028N08N3GXKSA1 | INFINEON

INFINEON IPP028N08N3GXKSA1

Single N-Channel 80 V 2.8 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3


Ordering Info

In Stock: 0

MOQ: 500

Package Quantity: 500

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
500 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 1430
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80
Drain Current-Max (ID) 100
Drain-source On Resistance-Max 0.0028
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON