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Learn more about ECAD Model here.Electrical Characteristics
Avalanche Energy Rating (Eas) | 235 |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 |
Drain Current-Max (ID) | 120 |
Drain-source On Resistance-Max | 0.0032 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
Moisture Sensitivity Level | NOT APPLICABLE |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 480 |
Qualification Status | Not Qualified |
Surface Mount | NO |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |