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IPP200N15N3GXKSA1 | INFINEON

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INFINEON IPP200N15N3GXKSA1


Ordering Info

In Stock: 2500 Delivery

MOQ: 500

Package Quantity: 500

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
500-2499 $1.50
2500+ $1.39


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Electrical Characteristics

Avalanche Energy Rating (Eas) 170
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150
Drain Current-Max (Abs) (ID) 50
Drain Current-Max (ID) 50
Drain-source On Resistance-Max 0.02
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150
Pulsed Drain Current-Max (IDM) 200
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON