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INFINEON IPW65R080CFDAFKSA1
Single N-Channel 650 V 80 mOhm 161 nC CoolMOS™ Power Mosfet - TO-247-3
Ordering Info
In Stock: 480 Delivery
MOQ: 240
Package Quantity: 240
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 240-479 | $11.42 |
| 480+ | $10.27 |
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Electrical Characteristics
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 1160 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650 |
| Drain Current-Max (ID) | 43.3 |
| Drain-source On Resistance-Max | 0.08 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 |
| JESD-30 Code | R-PSFM-T3 |
| Moisture Sensitivity Level | NOT APPLICABLE |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 137 |
| Reference Standard | AEC-Q101 |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |