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IRF1010EPBF | INFINEON

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INFINEON IRF1010EPBF

Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3


Ordering Info

In Stock: 1000 Delivery

MOQ: 1000

Package Quantity: 1000

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
1000+ $0.6758


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 320
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 84
Drain Current-Max (ID) 75
Drain-source On Resistance-Max 0.012
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200
Pulsed Drain Current-Max (IDM) 330
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON